page1 comhip technology corporation . tel:510-657-8671 . fax: 510-657-8921 . www.comchiptech.com case: molded plastic terminals: plated leads solderable per mil std-202, method 208 weight: 1.7 grams (approx.) mounting position: any mechanical data: maximum ratings and electrical characteristics diffused junction low forward voltage drop high reliability high current capability high surge current capability ideal for printed circuit boards features: reverse voltage: 50 ~ 1000 volts forward current: 2.0 amp KBP200-G thru 2010-g (rohs device) silicon bridge rectifiers -g suffix designated rohs compliant version dim a b c d e g h j i min. 14.22 10.67 11.68 4.57 3.60 2.16 12.70 0.76 1.52 max 15.24 11.68 12.70 5.08 4.10 2.67 - 0.88 kbp all dimension in mm d g e i a b j c h + ~ ~ - kbp single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate currently by 20%. characteristics peak repetitive reverse voltage working peak reverse voltage dc blocking voltage rms reverse voltage average rectified output current (note1) @ t a = 50oc non-repetitive peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (jedec method) forward voltage (per element) @ i f =2.0a peak reverse current @ t a =25oc at rated dc blocking voltage @ t a =100oc rating for fusing (t<8.3ms) typical thermal resistance (note3) operating and storage temperature range typical junction capacitance per element (note2) kbp 200-g 50 35 kbp 201-g 100 70 kbp 202-g 200 140 kbp 204-g 400 280 2.0 60 1.1 10 500 15 30 -55 to +160 25 unit v v a a v ua a 2 s k/w oc pf symbol v rrm v rwm v r v r (rms) i o i fsm v fm i rm i 2 t r ja t j , t stg c j kbp 206-g 600 420 kbp 208-g 800 560 kbp 2010-g 1000 700 note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0mhz and applied reverse voltage of 4.0v d.c. 3. thermal resistance junction to ambient mounted on pc board with 12mm 2 copper pad.
page2 comhip technology corporation . tel:510-657-8671 . fax: 510-657-8921 . www.comchiptech.com 0 75 150 225 2.0 1.5 1.0 0.5 0 io, average rectified current (a) t, temperature (oc) flg1. forward current derating curve 10 1.0 0.1 0 io, instantaneous fwd current (a) v f , instantaneous fwd voltage (v) flg2. typical fwd characteristics 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1 10 100 100 80 60 40 20 0 i fsm , peak fwd surge current (a) number of cycles at 60hz flg3. max non-repetitive peak fwd surge current 100 10 1 i j , junction capacitance (pf) v r , reverse voltage (v) flg 4. typical junction capacitance t j =25oc t j = 25oc t j = 150oc pulse width =300 us t j =150oc single half sine wave (jedec nethod) rating and characteristic curves (kbpp200-g ~ kbp2010-g) KBP200-G thru 2010-g (rohs device) silicon bridge rectifiers -g suffix designated rohs compliant version
page3 comhip technology corporation . tel:510-657-8671 . fax: 510-657-8921 . www.comchiptech.com 0 20 40 60 80 100 120 140 10,000 1000 100 10 1.0 0.1 0.01 i r , instantaneous reverse current (ma) (a) percent of rated peak reverse voltage (%) flg5. typical reverse characteristics rating and characteristic curves (kbpp200-g ~ kbp2010-g) t j = 150oc t j = 125oc t j = 25oc t j = 100oc KBP200-G thru 2010-g (rohs device) silicon bridge rectifiers -g suffix designated rohs compliant version
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